JPS5889864A - 絶縁ゲ−ト型半導体装置 - Google Patents

絶縁ゲ−ト型半導体装置

Info

Publication number
JPS5889864A
JPS5889864A JP56187033A JP18703381A JPS5889864A JP S5889864 A JPS5889864 A JP S5889864A JP 56187033 A JP56187033 A JP 56187033A JP 18703381 A JP18703381 A JP 18703381A JP S5889864 A JPS5889864 A JP S5889864A
Authority
JP
Japan
Prior art keywords
conductive
region
source
gate
metal electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56187033A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0427711B2 (en]
Inventor
Hideshi Ito
伊藤　秀史
Mitsuo Ito
伊藤　満夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56187033A priority Critical patent/JPS5889864A/ja
Publication of JPS5889864A publication Critical patent/JPS5889864A/ja
Publication of JPH0427711B2 publication Critical patent/JPH0427711B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
JP56187033A 1981-11-24 1981-11-24 絶縁ゲ−ト型半導体装置 Granted JPS5889864A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56187033A JPS5889864A (ja) 1981-11-24 1981-11-24 絶縁ゲ−ト型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56187033A JPS5889864A (ja) 1981-11-24 1981-11-24 絶縁ゲ−ト型半導体装置

Publications (2)

Publication Number Publication Date
JPS5889864A true JPS5889864A (ja) 1983-05-28
JPH0427711B2 JPH0427711B2 (en]) 1992-05-12

Family

ID=16199000

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56187033A Granted JPS5889864A (ja) 1981-11-24 1981-11-24 絶縁ゲ−ト型半導体装置

Country Status (1)

Country Link
JP (1) JPS5889864A (en])

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2575334A1 (fr) * 1984-12-21 1986-06-27 Radiotechnique Compelec Dispositif mos dont les regions de source sont disposees en bandes paralleles, et procede pour l'obtenir
JPS62113477A (ja) * 1985-09-30 1987-05-25 ゼネラル・エレクトリツク・カンパニイ 絶縁ゲ−ト形半導体装置
JPH01238174A (ja) * 1988-03-18 1989-09-22 Sanyo Electric Co Ltd 縦型ｍｏｓｆｅｔ
JPH02154469A (ja) * 1988-12-06 1990-06-13 Fuji Electric Co Ltd 縦形電界効果トランジスタ
JPH02189977A (ja) * 1989-01-18 1990-07-25 Nec Corp 半導体装置
WO2001031711A3 (en) * 1999-10-22 2001-11-22 Semiconductor Components Ind Vertical insulated gate field-effect device and method of making the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5499577A (en) * 1979-01-16 1979-08-06 Hitachi Ltd Semiconductor assembly

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5499577A (en) * 1979-01-16 1979-08-06 Hitachi Ltd Semiconductor assembly

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2575334A1 (fr) * 1984-12-21 1986-06-27 Radiotechnique Compelec Dispositif mos dont les regions de source sont disposees en bandes paralleles, et procede pour l'obtenir
JPS62113477A (ja) * 1985-09-30 1987-05-25 ゼネラル・エレクトリツク・カンパニイ 絶縁ゲ−ト形半導体装置
JPH01238174A (ja) * 1988-03-18 1989-09-22 Sanyo Electric Co Ltd 縦型ｍｏｓｆｅｔ
JPH02154469A (ja) * 1988-12-06 1990-06-13 Fuji Electric Co Ltd 縦形電界効果トランジスタ
JPH02189977A (ja) * 1989-01-18 1990-07-25 Nec Corp 半導体装置
WO2001031711A3 (en) * 1999-10-22 2001-11-22 Semiconductor Components Ind Vertical insulated gate field-effect device and method of making the same
US6344379B1 (en) 1999-10-22 2002-02-05 Semiconductor Components Industries Llc Semiconductor device with an undulating base region and method therefor

Also Published As

Publication number Publication date
JPH0427711B2 (en]) 1992-05-12

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